Latest research achievements of NXP 11GHz piezores

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NXP's latest research results: 1.1GHz piezoresistor ensures effective work. MEMS resonators are born

nxp semiconductor researchers described what they call a demonstrable, scalable silicon piezoresistive MEMS resonator that can work at 1.1GHz with records. The team designed a novel frequency conversion scheme for silicon resonators excited by electrostatic fields, in which the piezoresistive effect of graphene supercapacitors is the focus of silicon research to detect mechanical motion, which was revealed by the project team at the international electronic equipment conference

this frequency conversion scheme can be realized by a simple method, so that this resonator has a low effective impedance that is theoretically free from geometric images. Thus, a miniaturized, high-frequency MEMS oscillator without significant degradation in oscillator performance can be achieved, the group said. It is said that compared with using common capacitors or FET, the effective impedance of oscillation will be several (4) there is no action when turning on the power supply. Please confirm: 1 Encounter the reduction of limit magnitude

"the application potential of integrated chips brought by gigahertz MEMS oscillators shows the very possibility of manufacturing micro size precision oscillators and filters used in the field of wireless communication." Reinhoutwoltjer, head of Micro System Technology Department of NXP semiconductor group I T research department, said. The micro gigahertz MEMS oscillator, which integrates high-quality factors, can also provide unprecedented potential centralized induction for itself

although GHz MEMS oscillators have been demonstrated, their very high impedance comes from their small size. As a result, the signal strength at resonance can hardly be detected. Some methods to reduce the impedance of silicon MEMS oscillators have been proposed. They include reducing the width and aspect ratio of the frequency conversion channel, filling the conversion channel with high dielectric constant dielectric materials, or using piezoelectric materials to replace capacitor frequency conversion

unfortunately, all these methods still lead to an increase in impedance when the oscillator size is greatly reduced, woltjer said, "In addition, all these methods also increase the complexity of manufacturing and restrict the compatibility with standard CMOS. "

in this NXP device, the impact on the environment can also be minimized. The oscillator layer is etched into a 1.5 micron thick, n-type silicon-based dielectric layer by reactive ion etching through the oxide buried layer. The oscillator layer is exposed after isotropic etching of the oxide buried layer. The planar wiring process uses a factor of about 4x.

the expected oscillation range of the oscillator displayed on the IEDM is Hz to 1094mhz

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